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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1044 DESCRIPTION *High DC Current Gain : hFE= 700(Min.)@ IC= 1A, VCE= 4V *High Collector-Emitter Breakdown Voltage: V(BR) CEO= 80V(Min) *Wide Area of Safe Operation APPLICATIONS *Designed for high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCER Collector-Emitter Voltage VCEO Collector-Emitter Voltage w w scs .i w VALUE 100 V 100 V 80 V 6 V 6 A 3 A UNIT .cn mi e VEBO IC Emitter-Base Voltage Collector Current-Continuous IB B Base Current- Continuous Collector Power Dissipation @TC=25 Junction Temperature PC 60 W Tj 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD1044 TYP. MAX UNIT VCER Collector-Emitter Breakdown Voltage IC= 50mA, RBE= 1k 100 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA, IB= 0 80 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A, IB= 30mA B 1.7 V A ICBO Collector Cutoff current VCB= 100V, IE= 0 10 IEBO Emitter Cutoff Current VEB= 6V; IC= 0 10 mA hFE DC Current Gain IC= 1A; VCE= 4V hFE classifications Q 700-2500 2000-5000 w w P O 4000-10000 scs .i w .cn mi e 700 10000 isc Websitewww.iscsemi.cn |
Price & Availability of 2SD1044
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